Final answer:
The question cannot be answered precisely without the current – voltage characteristics plot. the effective Richardson constant is typically calculated based on the thermionic emission current density formula involving temperature, work function, and other constants.
Step-by-step explanation:
The question at hand is related to the electrical characteristics of a W-Si (tungsten – silicon) Schottky diode at a temperature of 300K. Given the Schottky barrier height of 0.67V, the task is to calculate the effective Richardson constant for electron emission. however, without the attachment mentioned, it is impossible to provide the specific numerical answer as the current – voltage characteristics plot is crucial for this calculation. Normally, the Richardson constant (also known as the Richardson-Dushman equation) is related to the thermionic emission current density J, which can be calculated using the formula J = A*T2*e-(ϕ/kT), where A is the Richardson constant, T is the absolute temperature, ϕ is the work function (or Schottky barrier height in this case), k is the Boltzmann constant, and e is the electron charge.
To compute the effective Richardson constant for this diode, additional data obtained from the I-V characteristics curve under forward bias conditions is needed to integrate it with this equation.